Negative differential resistance of a ridge-type InGaAs quantum wire field-effect transistor

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1680-1683

  Sugaya, Takeyoshi ^a   Kim, Seong Jin ^a   Nakagawa, Tadashi ^a   Sugiyama, Yoshinobu ^a   Ogura, Mutsuo ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; MAGNETORESISTANCE; NEGATIVE RESISTANCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

NEGATIVE DIFFERENTIAL RESISTANCE (NDR);

SEMICONDUCTOR QUANTUM WIRES;

EID: 0034187088     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591451     Document Type: Article

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