Nanoscale effects in devices based on chalcogenide solid solutions

Superlattices and Microstructures

Volumn 27, Issue 5, 2000, Pages 485-488

  Kozicki, M N ^a   Yun, M ^a   Yang, S J ^a   Aberouette, J P ^a   Bird, J P ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODEPOSITION; GRAIN BOUNDARIES; SILVER; SOLID SOLUTIONS; THERMAL EFFECTS;

ARSENIC TRISULFIDE; CHALCOGENIDES;

NANOSTRUCTURED MATERIALS;

EID: 0034187067     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0827     Document Type: Article

References (5)

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3. M. N. Kozicki, W. C. West.
4. Kamal A. H. M., Lutzen J., Sanborn B. A., Sidorov M. V., Kozicki M. N., Smith D. J., Ferry D. K. Semicond. Sci. Technol. 13:1998;1328.
5. Lutzen J., Kamal A. H. M., Kozicki M. N., Ferry D. K., Sidorov M. V., Smith D. J. J. Vac. Sci. Technol. B16:1998;2802.