Comparison of the potential fluctuations in a-Si:H measured by the optical and transport methods

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1805-1809

  Sinha, A K ^a   Agarwal, S C ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DOPING (ADDITIVES); LIGHT ABSORPTION; PHOSPHORUS;

HYDROGENATED AMORPHOUS SILICON; POTENTIAL FLUCTUATIONS;

AMORPHOUS SILICON;

EID: 0034186987     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591475     Document Type: Article

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