Study of Pb diffusion on Si(111)-(7×7) with scanning tunneling microscopy: Low coverage

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1151-1155

  Slezak, J ^a   Chab, V ^a   Chvoj, Z ^a   Mutombo, P ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BINDING ENERGY; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; LEAD; LOW ENERGY ELECTRON DIFFRACTION; MATHEMATICAL MODELS; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; STATISTICAL METHODS; SUBSTRATES;

VARIABLE TEMPERATURE SCANNING TUNNELING MICROSCOPY (VT STM);

SEMICONDUCTING SILICON;

EID: 0034186953     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591351     Document Type: Article

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