Partial oxidation of methane on the SiO2 surface - A quantum chemical study

Industrial and Engineering Chemistry Research

Volumn 39, Issue 2, 2000, Pages 250-258

  Ozturk, Sukru ^a   Onal, Isik ^b   Senkan, Selim ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMS; CHEMICAL BONDS; DISSOCIATION; FORMALDEHYDE; MOLECULAR DYNAMICS; NUMERICAL METHODS; OXIDATION; QUANTUM THEORY; SILICA; SILICON COMPOUNDS; SURFACES;

BOND DISSOCIATION ENERGIES; FACILE RING OPENING REACTION; MOLECULAR ORBITAL METHOD; PARTIAL OXIDATION; VICINAL HYDROXYLS;

METHANE;

FORMALDEHYDE; METHANE; SILICON DIOXIDE;

ARTICLE; CATALYSIS; CHEMICAL REACTION; CHEMICAL STRUCTURE; MODEL; MOLECULAR DYNAMICS; OXIDATION; QUANTUM CHEMISTRY; THERMODYNAMICS;

EID: 0034143322     PISSN: 08885885     EISSN: None     Source Type: Journal    
DOI: 10.1021/ie990252c     Document Type: Article

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