RF MBE growth of quasi-InGaN alloys by using multilayer structure

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 401-405

  Cho, Sung Hwan ^a   Okumura, Hajime ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MORPHOLOGY; MULTILAYERS; PHASE SEPARATION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

INDIUM GALLIUM NITRIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034140288     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00579-5     Document Type: Article

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