RTP temperature calibration using titanium silicides

Solid State Technology

Volumn 43, Issue 2, 2000, Pages 69-74

  Jonak Auer, Ingrid ^a  

^a AMS AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY ABSORPTION; MECHANICAL VARIABLES MEASUREMENT; METALLIC FILMS; PYROMETERS; SILICON WAFERS; TEMPERATURE CONTROL; THERMAL EXPANSION; THERMAL STRESS; TITANIUM COMPOUNDS; YIELD STRESS;

NITRIDATION; SHEET RESISTIVITY; TEMPERATURE CALIBRATION; TEMPERATURE DIFFERENCE; TITANIUM SILICIDES;

RAPID THERMAL ANNEALING;

EID: 0034140182     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (7)

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2. F. Roozeboom, Rapid Thermal Processing: Science and Technology, Academic Press, Boston, p. 349, 1993.
3. A. Kermani, J. Crowley, "The Formation of TiN for Diffusion Barrier Application," communication from Peak Systems Inc., 3550 West Warren Avenue, Fremont, CA.
4. y under Rapid Thermal Annealing," J. Appl. Phys., 64(1), p. 344, 1988.
5. V.E. Borisenko, P.J. Hesketh, Rapid Thermal Processing of Semiconductors, Plenum Press, New York, p. 155, 1997.
6. S.P. Murarka, "Refractory Silicides for Integrated Circuits," J. Vac. Sci. Technology, 17(4), p. 775, 1980.
7. G.V. Samsonov, High Temperature Materials, Plenum Press, New York, p. 128, 1964.