Exchange interaction effects in the crossing of spin-polarized Landau levels in a silicon-germanium heterostructure: Transition into a ferromagnetic state

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 6, Issue 1, 2000, Pages 288-292

  Zeitler, U ^a   Schumacher, H W ^a   Regul, J ^a   Haug, R J ^a   Weitz, P ^b   Jansen, A G M ^c   Schaffler F ^d  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c CNRS   (France)

^d JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON ENERGY LEVELS; FERROMAGNETISM; HALL EFFECT; PARAMAGNETISM; QUANTUM THEORY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

LANDAU LEVELS; QUANTUM HALL EFFECT;

HETEROJUNCTIONS;

EID: 0034139146     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00156-3     Document Type: Article

References (13)

1. Fang F., Stiles P.J. Phys. Rev. 174:1968;823.
2. Nicholas R.et al. Phys. Rev. B. 37:1988;1294.
3. Dunford R.B.et al. Solid State Commun. 96:1995;57.
4. Koester S.J., Ismail K., Cho J.O. Semicond. Sci. Technol. 12:1996;348.
5. P. Weitz et al., Surf. Sci. 361 / 362 (1996) 542, to be published.
6. F.F. Fang et al., in: D. Heimann (Ed.), High Magnetic Fields in the Physics of Semiconductors, World Scientific, Singapore, 1995, pp. 620-623.
7. Schumacher H.W.et al. Physica B. 256-258:1998;260.
8. Brosig S.et al. Physica B. 256-258:1998;239.
9. Nelson S.F.et al. Appl. Phys. Lett. 61:1992;64.
10. Többen D.et al. Phys. Rev. B. 46:1992;4344.
11. Koch S.et al. Phys. Rev. B. 47:1993;4048.
12. Dunford R.B.et al. J. Phys.: Condens. Matter. 9:1997;1565.
13. Coleridge P.T.et al. Solid State Commun. 102:1997;755.