Anomalous resonant-tunneling effect in type II heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 6, Issue 1, 2000, Pages 335-338

  Mendez, E E ^a   Kuznetsov, V V ^a   Chokin, D ^a   Bruno, J D ^b  

^a STONY BROOK UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; ELECTRON RESONANCE; ELECTRON TUNNELING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM ANTIMONIDE; GALLIUM ANTIMONIDE; INDIUM ARSENIDE; NEGATIVE DIFFERENTIAL CONDUCTANCE; RESONANT TUNNELING EFFECT;

HETEROJUNCTIONS;

EID: 0034139140     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00173-3     Document Type: Article

References (4)

1. Mendez E.E., Esaki L., Wang W.I. Phys. Rev. B. 33:1986;2893.
2. Goldman V.J., Tsui D.C., Cunningham J.E. Phys. Rev. B. 35:1987;9387.
3. Mendez E.E., Ohno H., Esaki L., Wang W.I. Phys. Rev. B. 43:1991;5196.
4. Mendez E.E., Kuznetsov V., Chokin D., Bruno J.D. Bull. Am. Phys. Soc. 44:1999;1471.