Magnetic field dependence of the metal-insulator transition in Ga[Al]As-heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 6, Issue 1, 2000, Pages 264-267

  Jaggi R D ^a   Von Waldkirch, M ^a   Heinzel, T ^a   Ribeiro, E ^a,c   Ensslin, K ^a   Medeiros Ribeiro, G ^b   Petroff, P M ^b  

^a ETH ZURICH   (Switzerland)

^b University of California   (United States)

^c UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; KINETIC ENERGY; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

GALLIUM ALUMINUM ARSENIDE; INDIUM ARSENIDE;

HETEROJUNCTIONS;

EID: 0034138997     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00141-1     Document Type: Article

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