XX-XY interface band mixing in GaAs/AlAs heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 6, Issue 1, 2000, Pages 214-217

  Im, Hyunsik ^a   Bremme, L E ^a   Chung, Y C ^a   Klipstein, P C ^a   Grey, R ^b   Hill, G ^b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI SURFACE; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MIXING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM ARSENIDE; DOUBLE BARRIER STRUCTURE; INTERFACE BAND MIXING;

HETEROJUNCTIONS;

EID: 0034138991     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00082-X     Document Type: Article

References (13)

1. Lu Y.-T., Sham L.J. Phys. Rev. B. 40:1989;5567.
2. Smith J.M.et al. Phys. Rev. B. 57:1998;1740.
3. Snell B.R.et al. Phys. Rev. Lett. 59(24):1987;2806.
4. Smoliner J.et al. Phys. Rev. Lett. 63:1989;2116.
5. Hayden R.K.et al. Phys. Rev. Lett. 66:1991;1749.
6. Smith J.M.et al. Phys. Rev. B. 58:1998;4708.
7. Im H., Klipstein P.C., Grey R., Hill G. Phys. Rev. Lett. 83:1999;3693.
8. Fu Y.et al. Phys. Rev. B. 47:1993;13 498.
9. P.C. Klipstein, in: M. Heiblum, E. Cohen (Eds.), 24th International Conference on Physics of Semiconductors, Jerusalem, 1998, World Scientific, Singapore, 1999, CDROM 1265.pdf.
10. Foreman B.A. Phys. Rev. Lett. 81:1998;425.
11. H. Im, P.C. Klipstein, R. Grey, G. Hill, in: M. Heiblum, E. Cohen (Eds.), 24th International Conference on Physics of Semiconductors, Jerusalem, 1998, World Scientific, Singapore, 1999, CDROM 1075.pdf.
12. Ando T., Akera H. Phys. Rev. B. 40:1989;11 619.
13. Im H., Klipstein P.C., Smith J.M., Grey R., Hill G. Phys. Stat. Sol. 211:1998;489.