Single-mode InAsSb/InAsSbP laser (λ ≈ 3.2 μm) tunable over 100 Å

Semiconductors

Volumn 34, Issue 2, 2000, Pages 237-242

  Danilova, A P ^a   Imenkov, A N ^a   Kolchanova, N M ^a   Civis, S ^b   Sherstnev, V V ^a   Yakovlev, Yu P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b J HEYROVSKÝ INSTITUTE OF PHYSICAL CHEMISTRY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034134338     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187939     Document Type: Article

References (13)

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