Chemically amplified resists based on poly(1,4-dioxaspiro[4.4]nonane-2-methyl methacrylate)

Polymer

Volumn 41, Issue 1, 2000, Pages 149-153

  Kim, J B ^a   Park, J J ^a   Jang, J H ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Chemically amplified resist; Ketal protected polymer; Poly(1,4 dioxaspiro 4.4 nonane 2 methyl methacrylate)

Indexed keywords

ALCOHOLS; CATALYSIS; DIFFUSION; HYDROLYSIS; KETONES; ORGANIC ACIDS; POLYMETHYL METHACRYLATES; SOLUBILITY; SYNTHESIS (CHEMICAL); TEMPERATURE; TRANSPARENCY; ULTRAVIOLET RADIATION;

ACID CATALYSIS; CHEMICALLY AMPLIFIED PHOTORESISTS; CYCLOPENTANONE; KETAL GROUP; MATRIX POLYMER;

PHOTORESISTS;

ACETAL; ALCOHOL DERIVATIVE; CYCLOPENTANONE DERIVATIVE; DIOXANE DERIVATIVE; METHACRYLIC ACID DERIVATIVE; POLYMER;

ARTICLE; RADIOSENSITIVITY; SYNTHESIS; ULTRAVIOLET RADIATION;

EID: 0033991085     PISSN: 00323861     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0032-3861(99)00154-8     Document Type: Article

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