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Volumn 208, Issue 1, 2000, Pages 42-48
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A New double crucible technique for LEC growth of In-doped GaAs crystals
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Author keywords
Czochralski; Double crucible; GaAs; Liquid encapsulant; Segregation
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Indexed keywords
BORON COMPOUNDS;
CRYSTAL GROWTH FROM MELT;
INDIUM;
SEGREGATION (METALLOGRAPHY);
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
SINGLE CRYSTALS;
LIQUID ENCAPSULANT CZOCHRALSKI (LEC) GROWTH;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0033909226
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00467-4 Document Type: Article |
Times cited : (4)
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References (12)
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