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Volumn 208, Issue 1, 2000, Pages 42-48

A New double crucible technique for LEC growth of In-doped GaAs crystals

Author keywords

Czochralski; Double crucible; GaAs; Liquid encapsulant; Segregation

Indexed keywords

BORON COMPOUNDS; CRYSTAL GROWTH FROM MELT; INDIUM; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

EID: 0033909226     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00467-4     Document Type: Article
Times cited : (4)

References (12)
  • 9
    • 84991414856 scopus 로고    scopus 로고
    • US Patent 5,370,078, 1994
    • S. Kou, M.H. Lin, US Patent 5,370,078, 1994.
    • Kou, S.1    Lin, M.H.2
  • 11
    • 0342495597 scopus 로고    scopus 로고
    • Proceedings of ACCGE-11 Conference
    • Tucson, AZ, August accepted
    • J. He, S. Kou, Proceedings of ACCGE-11 Conference, Tucson, AZ, August 1999, J. Cryst. Growth, accepted.
    • (1999) J. Cryst. Growth
    • He, J.1    Kou, S.2
  • 12
    • 84991429192 scopus 로고
    • Technical Report ADA297039, Defense Technical Information Center, Ft. Belvoir, VA
    • R. M. Ware, Technical Report ADA297039, Defense Technical Information Center, Ft. Belvoir, VA, 1995.
    • (1995)
    • Ware, R.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.