New EXAFS measurements by XEOL and TEY on porous silicon

Journal of Porous Materials

Volumn 7, Issue 1, 2000, Pages 169-172

  Daldosso, Nicola ^a   Rocca, Francesco ^a   Dalba, Giuseppe ^b   Fornasini, Paolo ^b   Grisenti, Rolly ^b  

^a CNR   (Italy)

^b INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; ETCHING; LUMINESCENCE; QUANTUM THEORY; X RAY SPECTROSCOPY;

EXTENDED X RAY ABSORPTION FINE STRUCTURE (EXAFS) SPECTROSCOPY; QUANTUM CONFINEMENT EFFECT; TOTAL ELECTRON YIELD (TEY) TECHNIQUE; X RAY EXCITED OPTICAL LUMINESCENCE (XEOL) SPECTROSCOPY;

POROUS SILICON;

EID: 0033908789     PISSN: 13802224     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1009622417710     Document Type: Article

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