Optimum design parameters for different patterns of CB-structure

Chinese Journal of Electronics

Volumn 9, Issue 1, 2000, Pages 6-11

  Chen, Xingbi ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK SYNTHESIS; OPTIMIZATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

CHARGE COMPENSATION; COMPOSITE BUFFER (CB) STRUCTURES;

MOS DEVICES;

EID: 0033908218     PISSN: 10224653     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. CHEN X.B., "Semiconductor power devices with alternating conductivity type high-voltage breakdown regions", U. S. Patent 5, 216, 275, Jun. 1, 1993.
2. D.J. Coe, "High voltage semiconductor device", U. S. Patent 4, 754, 310, 1988.
3. G. Deboy, et al., "A new generation of high voltage MOSFETs breaks the limit line of silicon", Proc. IEDM 1998, pp.683-686, 1998.
4. Chen X.B., "Theory of a novel voltage sustaining (CB) layer for power devices", Chinese Journal of Electronics, Vol.7, No.3, pp.211-216, 1998.
5. TMA/MEDICI, 〈Two-Dimensional Device Simulation Program〉 Manual Book, version 2.1, Technology Modeling Associates, Inc., 1995.
6. W. Fulop, "Calculation of avalanche breakdown voltage of silicon p-n junctions", Solid-State Electronics, Vol.10, pp.39-47, 1967.