Voltage-controlled interference of ballistic electrons in an open quantum dot

Physica B: Condensed Matter

Volumn 280, Issue 1-4, 2000, Pages 390-391

  Figielski, T ^a   Wosinski, T ^a   Morawski, A ^a   Makosa, A ^a   Tkaczyk, Z ^a   Wrobel J ^a   Kaminska, E ^b   Papis, E ^b   Piotrowska, A ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSPORT PROPERTIES; ELECTROSTATICS; ETCHING; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; OSCILLATIONS; QUANTUM INTERFERENCE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACES; VOLTAGE CONTROL;

BALLISTIC ELECTRONS; ELECTROSTATIC AHARONOV-BOHM EFFECT; SCHOTTKY GATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033907797     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)01779-2     Document Type: Article

References (5)

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4. T. Figielski, T. Wosinski, J. Appl. Phys. 85 (1999) 1984.
5. S.E. Laux et al., Surf. Sci. 196 (1988) 101.