Overcoming limitations of lumped MOS models: Understanding large-signal non-quasi-static MOS models for handling fast transient signals in RF applications

IEEE Circuits and Devices Magazine

Volumn 16, Issue 2, 2000, Pages 19-26

  Aghdaie, Behnam ^a   Sheu, Bing ^a  

^a Avantl Corporation

Author keywords

[No Author keywords available]

Indexed keywords

LUMPED PARAMETER NETWORKS; SEMICONDUCTOR DEVICE MODELS;

RELAXATION TIME LUMPED MODEL;

MOS DEVICES;

EID: 0033907726     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/101.833031     Document Type: Article

References (6)

1. M. Chan, "A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation," IEEE Trans. Electron Devices, vol. 45, p. 834, 1998.
2. Y. Cheng and C. Hu, MOSFET Modeling & BSIM3 User's Guide. Boston, MA: Kluwer, 1999.
3. S. Tin and C. Hu "BSIM3 MOSFET model accuracy for RF circuit simulation," in Proc. RAWCON, 1998, pp. 351-354.
4. Y. Tsividis, Operation and Modeling of the MOS Transistor, 2nd ed. New York: WCB/McGraw-Hill, 1999.
5. R. Muller and T. Kamins, Device Electronics for Integrated Circuits. New York: Wiley, 1986.
6. Star-Hspice User's Manual, Release 1999,2, Avantl Corporation, Fremont, CA.