Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 109-112

  Xu, J P ^a   Lai, P T ^a   Cheng, Y C ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRON TRAPS; HOT CARRIERS; INTERFACES (MATERIALS); NITRIDING; NITROGEN; OXIDES; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; STRESSES;

DYNAMIC STRESS; HOT CARRIER STRESS; NITRIDATION; THERMAL OXIDE DEVICES;

MOSFET DEVICES;

EID: 0033907608     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817575     Document Type: Article

References (17)