Observation of structural depth profiles in porous silicon by atomic force microscopy

Journal of Porous Materials

Volumn 7, Issue 1, 2000, Pages 349-352

  Chang, D C ^a   Baranauskas, V ^a,b   Doi, I ^a   Prohaska, T ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b UNIVERSITY OF NATURAL RESOURCES AND LIFE SCIENCES   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPILLARITY; DRYING; FOURIER TRANSFORMS; HYDROFLUORIC ACID; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PORE SIZE; POROSITY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

NANOMETRIC ROUGHNESS;

POROUS SILICON;

EID: 0033906542     PISSN: 13802224     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1009635004449     Document Type: Article

References (6)

1. L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. V. Lehmann and U. Gosele, Appl. Phys. Lett. 58, 856 (1991).
3. V. Grivickas, V. Baranauskas, C.R. Rodrigues, P. Basmaji, and L. Misoguti, Int. J. of Optoelectr. 9, 303 (1994).
4. V. Baranauskas, O.P. Thim, and A. Peled, Appl. Surf. Sci. 86, 398 (1995).
5. A.G. Cullis and L.T. Canham, Nature 353, 335 (1991).
6. Qi Zhang and S.C. Bayliss, J. Appl. Phys. 57, 1351 (1996).