Defect structure of monocrystalline (0 0 1)-oriented Zn0.62Cu0.19In0.19S films grown on GaP by pulsed laser deposition (PLD)

Journal of Crystal Growth

Volumn 209, Issue 1, 2000, Pages 68-74

  Wagner, G ^a   Lange, U ^b   Bente, K ^b   Lenzner, J ^c   Lorenz, M ^c  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^b Faculty of Chemistry and Mineralogy   (Germany)

^c Institute of Experimental Physics I   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER ALLOYS; DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPY; FILM GROWTH; NUCLEATION; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; ZINC SULFIDE;

GALLIUM PHOSPHIDE; PULSED LASER DEPOSITION (PLD); ZINC COPPER INDIUM SULFIDE;

SEMICONDUCTING FILMS;

EID: 0033906274     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00542-4     Document Type: Article

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