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Volumn 439, Issue 2, 2000, Pages 647-650

Modeling and optimization of InGaAs infrared photovoltaic detectors

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INFRARED DETECTORS; MATHEMATICAL MODELS; OPTIMIZATION; PHOTODIODES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR COUNTERS; SEMICONDUCTOR DOPING;

EID: 0033905799     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00907-9     Document Type: Article
Times cited : (8)

References (13)
  • 8
    • 0038525558 scopus 로고
    • Auger recombination coefficients in InGaAs
    • P. Bhattacharya (Ed.), London
    • J. Shah, Auger recombination coefficients in InGaAs, in: P. Bhattacharya (Ed.), Indium Gallium Arsenide, EMIS Datareviews Series, Vol. 8, London, 1993, p. 180.
    • (1993) Indium Gallium Arsenide, EMIS Datareviews Series , vol.8 , pp. 180
    • Shah, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.