2.0 μm emission properties and energy transfer between Ho3+ and Tm3+ in PbO-Bi2O3-Ga2O3 glasses

Journal of the American Ceramic Society

Volumn 83, Issue 4, 2000, Pages 787-791

  Shin, Yong Beom ^a   Lim, Hyung Tack ^a,b   Choi, Yong Gyu ^a,c   Kim, You Song ^a   Heo, Jong ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; DOPING (ADDITIVES); EMISSION SPECTROSCOPY; ENERGY TRANSFER; FLUORESCENCE; GALLIUM COMPOUNDS; HOLMIUM; LEAD COMPOUNDS; RELAXATION PROCESSES; THULIUM;

BISMUTH OXIDE; GALLIUM OXIDE; LEAD OXIDE;

GLASS;

EID: 0033904441     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2000.tb01275.x     Document Type: Article

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