Deposition behaviour of222Rn progeny on surfaces

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 443, Issue 2-3, 2000, Pages 546-556

  Leung, J K C ^a   Ho, C W ^a   Tso, M Y W ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Deposition; Radon progeny; Recoil fraction

Indexed keywords

AEROSOLS; ALPHA PARTICLES; COATINGS; DEPOSITION; INDOOR AIR POLLUTION; LEAD; PARTICLE DETECTORS; POLONIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

SEMICONDUCTOR DETECTORS;

RADON;

EID: 0033903723     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)01153-5     Document Type: Article

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