High-gain 18-32 GHz MMIC driver amplifier for LMDS application

Microwave and Optical Technology Letters

Volumn 24, Issue 4, 2000, Pages 237-238

  D'Agostino, S ^a   Betti Berutto, A ^b   Poledrelli, C ^b   Khandavalli, C ^b   Satoh, T ^c   Yokoyama, T ^c   Kuroda, S ^c   Fukaya, J ^c  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b Fujitsu Compound Semiconductor Inc   (United States)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; HIGH FREQUENCY AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE;

LOCAL MULTIPOINT DISTRIBUTION SERVICES;

MICROWAVE AMPLIFIERS;

EID: 0033903495     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(20000220)24:4<237::AID-MOP9>3.0.CO;2-1     Document Type: Article

References (4)

1. T. Satoh et al., A 68% P.A.E. power PHEMT for K-band satellite communication system, Proc 1999 MTT-S Symp, Anaheim, CA, June 1999.
2. R. Yarborough et al., Performance comparison of 1 watt Ka-band MMIC amplifiers using pseudomorphic HEMT and ion-implanted MESFET, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuit Symp.
3. Y. Ayasli et al., Capacitively coupled travelling-wave power amplifier, IEEE Trans Electron Devices ED-31 (1984), 1937-1942.
4. G. Gonzales, Microwave transistor amplifier analysis and design, Prentice-Hall, Englewood Cliffs, NJ, 1984.