Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 442, Issue 1, 2000, Pages 223-229

  Saveliev, V ^a   Golovin, V ^b  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^b Center of Perspective Technology and Apparatus   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; AVALANCHE DIODES; CHARGED PARTICLES; ELECTRIC FIELDS; FEEDBACK; GAIN MEASUREMENT; PHOTODETECTORS; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

HIGH CHARGE MULTIPLICATION; METAL RESISTOR SEMICONDUCTOR STRUCTURES; SILICON AVALANCHE DETECTORS; SILICON AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0033902691     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)01225-5     Document Type: Article

References (4)

1. W.T. Tsang, Lightwave Communications Technology, AT&T Bell Laboratories, 1985.
2. A. Gasanov, V. Golovin, Z. Sadigov, N. Yusipov, Avalanche photodetector on base metal-resistor-semiconductor structure, Microelectronics, 1989.
3. S.M. Sze, Physics of Semiconductor Devices, A Wiley-Interscience publication, New York, 1981.
4. P.P. Webb, R.J. McIntyre, J. Conrady, Properties of Avalanche Photodiodes RCA Rev. 35 (1974).