Optical and structural properties of InGaP heterostructures

Thin Solid Films

Volumn 364, Issue 1, 2000, Pages 244-248

  Moriarty, G R ^a   Kildemo, M ^a   Beechinor, J T ^a   Murtagh, M ^a   Kelly, P V ^a   Crean, G M ^a   Bland, S W ^b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Epitaxial Prod International Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; ORDER DISORDER TRANSITIONS; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN;

INDIUM GALLIUM PHOSPHIDE; INTERMIXING;

HETEROJUNCTIONS;

EID: 0033902435     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00894-9     Document Type: Article

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