Quantum critical point in CeCo(Ge1-xSix)3

Physica B: Condensed Matter

Volumn 281-282, Issue , 2000, Pages 340-342

  De Medeiros, S N ^a,b,c   Continentino, M A ^a,b,c   Orlando, M T D ^a,b,c   Fontes, M B ^a,b,c   Baggio Saitovitch, E M ^a,b,c   Rosch, A ^a,b,c   Eichler, A ^a,b,c  

^a FLUMINENSE FEDERAL UNIVERSITY   (Brazil)

^b CENTRO BRASILEIRO DE PESQUISAS FÍSICAS   (Brazil)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRON SCATTERING; HYDROSTATIC PRESSURE; INTERMETALLICS; MAGNETIC ANISOTROPY; MAGNETIC SUSCEPTIBILITY; MAGNETIC VARIABLES MEASUREMENT; PHASE TRANSITIONS; PRESSURE EFFECTS; SILICON;

QUANTUM CRITICAL POINT;

CERIUM COMPOUNDS;

EID: 0033902123     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)01222-3     Document Type: Article

References (5)

1. M.A. Continentino, Phys. Rev. B 57 (1998) 5966.
2. T. Moriya, Spin Fluctuations in Itinerant Electron Magnetism, Springer, Berlin, 1985.
3. D. Eom, M. Ishikawa, J. Kitagawa, N. Takeda, J. Phys. Soc. Japan 67 (1998) 2495.
4. J. Hertz, Phys. Rev. B 14 (1974) 1165.
5. A.J. Millis, Phys. Rev. B 48 (1993) 7183.