Effects of traps on the dark current transients in GaAs/AlGaAs quantum-well infrared photodetectors

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 1, 2000, Pages 130-134

  Perera, A G U ^a   Matsik, S G ^a   Ershov, M ^a   Yi, Y W ^a   Liu, H C ^b   Buchanan, M ^b   Wasilewski, Z R ^b  

^a GEORGIA STATE UNIVERSITY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; PHOTOCURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

ALUMINUM GALLIUM ARSENIDE; DARK CURRENT; QUANTUM WELL INFRARED PHOTODETECTORS;

INFRARED DETECTORS;

EID: 0033901724     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00302-1     Document Type: Article

References (6)

1. V.N. Ovsyuk, M.A. Dem'yanenko, V.V. Shashkin, A.I. Toropov, Semiconductors 32 (1998) 1082.
2. V.I. Borosov, V.A. Sablikov, I.V. Borisova, A.I. Chmil', Semiconductors 33 (1999) 60.
3. A.G. Steele, H.C. Liu, M. Buchanan, Z.R. Wasilewski, J. Appl. Phys. 71 (1992) 1062.
4. H.C. Liu, Z.R. Wasilewski, M. Buchanan, H. Chu, Appl. Phys. Lett. 63 (1993) 761.
5. K. Yamanaka, S. Naurituska, K. Kanamoto, M. Mihara, M. Ishii, J. Appl. Phys. 61 (1987) 5062.
6. K.W. Nauka, in: E.R. Weber (Ed.), Imperfections in III/V Materials, Academic Press Ine, Boston, 1993, pp. 343-396.