Ellipsometric investigation of optical constant and band gap of Ga1-xInxN/GaN (x≤0.12) heterostructures

Solid State Communications

Volumn 114, Issue 6, 2000, Pages 325-328

  Lee, M H ^a   Kim, K J ^a   Oh, E ^b  

^a Konkuk University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTAL ORIENTATION; ELLIPSOMETRY; ENERGY GAP; LIGHT INTERFERENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OSCILLATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

SELLMEIER OPTICAL CONSTANTS;

HETEROJUNCTIONS;

EID: 0033901227     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00051-X     Document Type: Article

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