Analysis by measurements and circuit simulations of the PT- and NPT-IGBT under different short-circuit conditions

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn 2, Issue , 2000, Pages 1115-1121

  Cotorogea, M ^a   Claudio, A ^a   Aguayo, J ^a  

^a CENTRO NACIONAL DE INVESTIGACIÓN Y DESARROLLO TECNOLÓGICO   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

NON-PUNCH THROUGH INTEGRATED GATE BIPOLAR TRANSISTORS (NPT-IGBT); PUNCH THROUGH INTEGRATED GATE BIPOLAR TRANSISTORS (PT-IGBT); SOFTWARE PACKAGE SPICE;

COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRIC NETWORK ANALYSIS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); INDUCTANCE MEASUREMENT; INTEGRATED CIRCUIT TESTING; SHORT CIRCUIT CURRENTS;

BIPOLAR TRANSISTORS;

EID: 0033901058     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. H.Giepibl: "Dynamic IGBT Short-circuit Tests for Evaluation and Production", PCIM'94, Numberg, Proc. Power Conversion, 1994, pp. 413-418.
2. S. Azzopardi, J.M. Vinassa, C. Zardini: "Behavior of Fast and Ultrafast 600V Punch-Through IGBT under Unclamped Inductive Switching", EPE'99, Conf. Proc., 1999.
3. S Duong, S Rael, C. Schaeffer. J.F. de Palma: "Short Circuit Behavior for PT and NPT IGBT Devices - Protection Against Explosion of the Case by Fuses", EPE'95 Conf. Proc., 1995, pp. 1-249-1-254
4. R. Kraus, M. Reddig, K. Hoffmann: "The Short Circuit Behavior of IGBTs based on Different Technologies", EPE'95 Conf. Proc., 1995, pp. 1-157- 1-160.
5. Y. C. Gerstenmaier, G. J. E. Scheller, M. Hierolzer: "Short Circuit Ruggedness, Switching, and Stationary Behaviour of New High Voltage IGBT in Measurement and Simulations", EPE'95 Conf. Proc., 1995, pp. 1-161 - 1-165.
6. H.-G. Eckel, L. Sack: "Optimization of the Short Circuit Behaviour of NPT-IGBT by the Gate Drive", EPE'95 Conf. Proc., 1995, pp. 2-213-2-218.
7. K. Reinmuth, L. Lorenz: "A New Generation of IGBTs and Concepts for Their Protection, PCIM'94, Numberg, Proc. Power Conversion, 1994, pp. 139-147.
8. L. Lorenz: "Drive and Protection Concepts for IGBTs", PCIM'93, Numberg, Proc. Power Conversion, 1994.
9. T. Laska, G. Miller, J. Niedermeyr: "A 2000V Non-Punch-Through IGBT with High Ruggedness", Solid-state Electronics, Vol. 35, No. 5, 1992, pp. 681-685.
10. A.R.Hefner, Jr.: "An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)", IEEE Transactions on PE, Vol. 6, No. 2, April 1991, pp. 208-219.
11. A.R.Hefner, Jr.: "Modeling Buffer Layer IGBTs for Circuit Simulation", IEEE Transactions on PE, Vol. 10, No. 2, March 1995, pp. 111-123.
12. R. Kraus, K. Hoffmann, P. Turkes: "Analysis and Modeling of the Technology Dependent Electro-thermal IGBT Characteristics", IPEC'95 Conference Proc., 1995.