Modification of internal temperature distribution in broad area semiconductor lasers and the effect on near- and far-field distributions

IEE Proceedings: Optoelectronics

Volumn 147, Issue 1, 2000, Pages 31-35

  O'Neill, E ^a   O'Brien, P ^a   Houlihan, J ^a   McInerney, J ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH POWER LASERS; PHOTOLITHOGRAPHY; TEMPERATURE DISTRIBUTION;

BROAD AREA SEMICONDUCTOR LASERS;

SEMICONDUCTOR LASERS;

EID: 0033901044     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20000205     Document Type: Article

References (11)

1. THOMPSON, G.H.B.: 'A theory for filamentation in semiconductor lasers including the dependence of dielectric constant on injected carrier density', Opto-Electronics, 1972, 4, pp. 257-310
2. LARRSON, A., MITTELSTEIN, M., ARAKAWA, Y., and YARIV, A.: 'High-efficiency broad area single quantum well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy', Electron. Lett., 1986, 22, (2), pp. 79-81
3. MEHUYS, D., LANG, R.J., MITTELSTEIN, M., SALZMAN, J., and YARIV, A.: 'Self-stabilized nonlinear lateral modes of broad area lasers', IEEE J. Quantum Electron., 1987, 23, pp. 1909-1920
4. LANG, R.J., LARSSON, A.C., and CODY, J.G.: 'Lateral modes of broad area semiconductor lasers: Theory and experiments', IEEE J. Quantum Electron., 1991, 27, pp. 312-320
5. CHANG-HASNAIN, C., KAPON, E., and BHAT, R.: 'Spatial mode structure of broad-area semiconductor quantum lasers', App. Phys. Lett., 1989, 54, (3), pp. 205-207
6. HADLEY, G.R., HOHIMER, J.P., and OWYOUNG, A.: 'Comprehensive modelling of diode arrays and broad-area devices with applications to lateral index tailoring', IEEE J. Quantum Electron., 1988, 24, (11), pp. 2138-2152
7. CHEN, Y.C., REISINGER, A.R., and CHINN, S.R.: 'Thermal wave-guiding in oxide-defined, narrow-stripe, large-optical-cavity lasers', App. Phys. Lett., 1982, 41, (2), pp. 129-131
8. ANDREWS, J.: 'Variable focusing due to refractive index gradients in a diode array travelling wave amplifier', J. Appl. Phys., 1988, 64, p. 2134
9. O'BRIEN, P., O'CALLAGHAN, J., and MCINERNEY, J.: 'Internal temperature distribution measurements in high power semiconductor lasers', Electron. Lett., 1998, 34, (14), pp. 1399-1401
10. MCCAULLEY, J., DONNELLY, V., VERNON, M., and TAHA, I.: 'Temperature dependence of the near infra-red refraction index of silicon, gallium arsenide and indium phosphide', Phys. Rev. B, 1994, 49, (11), pp. 7408-7417
11. HOHIMER, J.P., HADLEY, G.R., and OWYOUNG, A.: 'Mode control in broad-area diode lasers by thermally induced lateral index tailoring', App. Phys. Lett., 1988, 52, (4), pp. 260-262