Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 183-188

  Cheng, X C ^a   McGill, T C ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC CURRENTS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

ALUMINUM ANTIMONIDE; AVALANCHE PHOTODETECTORS; INDIUM ANTIMONIDE;

SEMICONDUCTING ANTIMONY COMPOUNDS;

EID: 0033900780     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00393-0     Document Type: Article

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