Control of VSe(-) defect levels in CuInSe2 prepared by rapid thermal processing of metallic alloys

Thin Solid Films

Volumn 361, Issue , 2000, Pages 432-436

  Alberts, V ^a   Bekker, J ^a   Witcomb, M J ^b   Schon J H ^c   Bucher, E ^d  

^a UNIVERSITY OF JOHANNESBURG   (South Africa)

^b UNIVERSITY OF THE WITWATERSRAND   (South Africa)

^c LUCENT TECHNOLOGIES   (United States)

^d UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; CRYSTAL DEFECTS; FILM GROWTH; FILM PREPARATION; HEATING; MORPHOLOGY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEGREGATION (METALLOGRAPHY); THERMOANALYSIS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

X RAY FLUORESCENCE (XRF);

SEMICONDUCTING FILMS;

EID: 0033899686     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00811-1     Document Type: Article

References (8)

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4. Klenk M., Schenker O., Probst U., Bucher E. Sol. Energy Mater. Sol. Cells. 1999.
5. Alberts V., Swanepoel R., Witcomb M.J. J. Mater. Sci. 33:1998;2919.
6. Massé G., Redjai E.J. Appl. Phys. 56:1984;1154.
7. Abou-Elfotouh F., Mountinho H., Bakry A., Coutts T.J., Kazmerski L.L. Sol. Cells. 30:1991;151.
8. Schön J.H., Alberts V., Bucher E. Semicond. Sci. Technol. 14:1999;657.