Dynamic back bias CMOS driver for low-voltage applications

Electronics Letters

Volumn 36, Issue 2, 2000, Pages 135-136

  Moisiadis, Y ^a   Bouras, I ^b   Arapoyanni, A ^a  

^a UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC LOSSES; MOS DEVICES; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

DYNAMIC BACK BIAS DRIVER SCHEMES;

CMOS INTEGRATED CIRCUITS;

EID: 0033899248     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000185     Document Type: Article

References (4)

1. CHUNG, I., PARK, Y.J., and MIN, H.S.: 'A new SOI inverter using dynamic threshold for low-power applications', IEEE Electron Device Lett., 1997, 18, (6), pp. 248-250
2. WADA, Y., UEDA, K., HIROTA, T., HIRANO, Y., MASHIKO, K., and HAMANO, H.: 'Active body-bias SOI-CMOS driver circuits'. Symp. VLSI Circuits, Dig. Tech. Papers, 1997, pp. 29-30
3. MOISIADIS, Y., BOURAS, I., PAPADAS, C., and SCHOELLKOPF, J.P.: 'Transient self back-biased buffer for low-voltage high-performance applications in standard CMOS technologies', Electron. Lett., 1999, 35, (2), pp. 112-113
4. LO, C.K., and CHAN, P.C.H.: 'A dynamic substrate bias inverter for low voltage applications'. Proc. IEEE Electron Device Meeting, Hong Kong, August 1997, pp. 19-22