|
Volumn 39, Issue 2 A, 2000, Pages 511-512
|
Dependence of the photoacoustic signal intensity on modulation frequency for CdInGaS4 crystals under a transmission detection configuration
|
Author keywords
Carrier diffusivity; CdInGaS4; Excess carrier lifetime; Photoacoustic (PA) technique; Surface recombination velocity; Thermal diffusivity
|
Indexed keywords
CHARGE CARRIERS;
CRYSTALS;
PHOTOACOUSTIC EFFECT;
SURFACE PHENOMENA;
THERMAL DIFFUSION IN SOLIDS;
CADMIUM INDIUM GALLIUM SULFIDE;
EXCESS-CARRIER LIFETIME;
SURFACE RECOMBINATION;
SEMICONDUCTING CADMIUM COMPOUNDS;
|
EID: 0033897469
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.39.511 Document Type: Article |
Times cited : (11)
|
References (13)
|