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Materials Science and Engineering: B

Volumn 69-70, Issue , 2000, Pages 266-271

The influence of deposition parameters on the structure of nanocrystalline silicon

(6) Terukov, E I a Kudoyarova, V Kh b Davydov, V Yu c Koughia, K V c Weiser, G a Mell, H a

a IOFFE INSTITUTE (Russian Federation)

b St Petersburg Pédiatrie Academy (Russian Federation)

c PHILIPPS UNIVERSITY MARBURG (Germany)

Author keywords

Nanocrystals; Raman; Silicon; Structure

Indexed keywords

CRYSTALLIZATION; FILM PREPARATION; HYDROGEN BONDS; INFRARED SPECTROSCOPY; MOLECULAR STRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICON WAFERS; SUBSTRATES; THERMAL EFFECTS; VOLUME FRACTION;

NANOCRYSTALLINE SILICON;

NANOSTRUCTURED MATERIALS;

EID: 0033896450 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(99)00306-2 Document Type: Article

Times cited : (8)

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