Thermally stimulated detrapping in porous silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 149-151

  Anastasiadis, C ^a   Triantis, D ^a  

^a UNIVERSITY OF WEST ATTICA   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ENERGY GAP; INTERFACES (MATERIALS); POROUS SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

CHARGE TRAPPING; THERMALLY STIMULATED DISCHARGE CURRENTS; TRAP-DISCHARGE DISPLACEMENT CURRENTS;

SEMICONDUCTING SILICON;

EID: 0033896301     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00238-X     Document Type: Article

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