Excess ion density at the GaP/GaP liquid-phase epitaxial regrowth interface

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 666-674

  Saito, Takao ^a   Oyama, Yutaka ^a   Suto, Ken ^a   Nishizawa, Jun Ichi ^b   Tomoyuki Kimura, ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL ATOMIC STRUCTURE; ETCHING; HYDROCHLORIC ACID; LIQUID PHASE EPITAXY; PRESSURE CONTROL; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE TREATMENT; VAPOR PRESSURE; VOLTAGE MEASUREMENT; WATER;

GALLIUM PHOSPHIDE; LIQUID-PHASE EPITAXIAL REGROWTH;

INTERFACES (MATERIALS);

EID: 0033896067     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00612-0     Document Type: Article

References (9)

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