Hall coefficient of the 2D electron system in silicon MOSFETs

Physica B: Condensed Matter

Volumn 280, Issue 1-4, 2000, Pages 301-302

  Sarachik, M P ^a   Simonian, D ^a,c   Mertes, K M ^a   Kravchenko, S V ^a,d   Klapwijk, T M ^b  

^a CITY COLLEGE OF NEW YORK   (United States)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c Columbia University ^*  (United States)

^d NORTHEASTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; DENSITY (SPECIFIC GRAVITY); GATES (TRANSISTOR); HALL EFFECT; LOW TEMPERATURE EFFECTS; MAGNETIC VARIABLES MEASUREMENT; PHASE TRANSITIONS; SEMICONDUCTING SILICON;

HALL COEFFICIENT; TWO DIMENSIONAL ELECTRON SYSTEMS;

MOSFET DEVICES;

EID: 0033894679     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)01698-1     Document Type: Article

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