Synthesis and characterization of thallium-based 1212 films with high critical current density on LaAlO3 substrates

Superconductor Science and Technology

Volumn 13, Issue 2, 2000, Pages 173-177

  Lao, J Y ^a   Wang, J H ^a   Wang, D Z ^b   Yang, S X ^b   Tu, Y ^b   Wen, J G ^b   Wu, H L ^b   Ren, Z F ^b   Verebelyi, D T ^c   Paranthaman, M ^c   Aytug, T ^c   Christen, D K ^c   Bhattacharya, R N ^d   Blaugher, R D ^d  

^a UNIVERSITY AT BUFFALO   (United States)

^b BOSTON COLLEGE   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; HIGH TEMPERATURE SUPERCONDUCTORS; LANTHANUM COMPOUNDS; LASER ABLATION; OXIDE SUPERCONDUCTORS; PULSED LASER APPLICATIONS; SUPERCONDUCTING TRANSITION TEMPERATURE; SYNTHESIS (CHEMICAL); THALLIUM COMPOUNDS;

LANTHANUM ALUMINUM OXIDE;

SUPERCONDUCTING FILMS;

EID: 0033894439     PISSN: 09532048     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-2048/13/2/310     Document Type: Article

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