AlAs monolayer dependence of the radiative recombination rate in a type II GaAs-AlAs double quantum well

Solid State Communications

Volumn 114, Issue 7, 2000, Pages 389-394

  Martins, D ^a   Gourdon, C ^a   Lavallard, P ^a   Planel, R ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLAYERS; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE;

DOUBLE QUANTUM WELLS; TIME-RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033893223     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00044-2     Document Type: Article

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