Characteristics of CrSi2 and Cr(Ni)Si2 synthesis in MEVVA ion source implantation and post-annealing processes

Applied Surface Science

Volumn 153, Issue 2, 2000, Pages 108-113

  Wang, Shuangbao ^a   Liang, Hong ^b   Zhu, Peiran ^a  

^a INSTITUTE OF PHYSICS   (China)

^b BEIJING NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHROMIUM COMPOUNDS; ION IMPLANTATION; SYNTHESIS (CHEMICAL);

CHROMIUM DISILICIDE; CHROMIUM NICKEL DISILICIDE;

SILICON WAFERS;

EID: 0033892964     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00360-8     Document Type: Article

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