Improvement of porous Si luminescence intensity durability by nitrogen ion irradiation using an ECR ion source

Journal of Porous Materials

Volumn 7, Issue 1, 2000, Pages 73-76

  Kumagai, Ayaka ^a   Kanegawa, Yuji ^a   Suda, Yoshiyuki ^a   Koshida, Nobuyoshi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON CYCLOTRON RESONANCE; EMISSION SPECTROSCOPY; ION BEAMS; ION BOMBARDMENT; ION SOURCES; NITROGEN; OXYGEN; PASSIVATION; PHOTOLUMINESCENCE;

PHOTOLUMINESCENCE INTENSITY STABILITY;

POROUS SILICON;

EID: 0033891461     PISSN: 13802224     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1009659109107     Document Type: Article

References (5)

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