Linewidth and dephasing of THz-frequency collective intersubband transitions in a GaAs/AlGaAs quantum well

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 1, 2000, Pages 204-207

  Williams, J B ^a   Sherwin, M S ^a   Maranowski, K D ^b   Kadow, C ^b   Gossard, A C ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ABSORPTION; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CHARGE DENSITY; COLLECTIVE EFFECTS; INTERSUBBAND LINEWIDTH; MANY BODY INTERACTIONS; TERAHERTZ INTERSUBBAND TRANSITION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033891221     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00320-3     Document Type: Article

References (5)

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