Al-free 950 nm BA diode lasers with high efficiency and reliability at 50 °C ambient temperature

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3945, Issue , 2000, Pages 301-307

  Erbert, G ^a   Beister, G ^a   Knauer, A ^a   Maege, J ^a   Pittroff, W ^a   Ressel, P ^a   Sebastian, J ^a   Staske, R ^a   Wenzel, H ^a   Weyers, M ^a   Traenkle, G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT SINKS; METALLORGANIC VAPOR PHASE EPITAXY; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

HIGH POWER LASERS;

SEMICONDUCTOR LASERS;

EID: 0033890428     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.380547     Document Type: Conference Paper

References (5)