Strongly index-guided II-VI laser diodes

IEEE Photonics Technology Letters

Volumn 12, Issue 3, 2000, Pages 236-238

  Legge, M ^a   Bacher, G ^a   Bader, S ^a   Forchel, A ^a   Lugauer, H J ^a   Waag, A ^a   Landwehr, G ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM COMPOUNDS; CURRENT DENSITY; LEAKAGE CURRENTS; OPTICAL WAVEGUIDES; POLYIMIDES; QUANTUM WELL LASERS; REACTIVE ION ETCHING; SEMICONDUCTOR LASERS;

RIDGE WAVEGUIDES; THRESHOLD CURRENTS;

INTEGRATED OPTOELECTRONICS;

EID: 0033889521     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.826899     Document Type: Article

References (6)

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2. M. A. Haase, P. F. Baude, M. S. Hagedorn, J. Qiu, J. M. DePuydt, H. Cheng, S. Guha, G. E. Höfler, and B. J. Wu, "Low-threshold buried-ridge II/VI laser diodes," Appl. Phys. Lett., vol. 63, pp. 2315-2317, Oct. 1993.
3. S. Y. Hu, D. B. Young, A. C. Gossard, and L. A. Coldren, "The effect of lateral leakage current on the experimental gain/current-density curve in quantum-well ridge-waveguide lasers," IEEE J. Quantum Electron., vol. 30, pp. 2245-2250, Oct. 1994.
4. M. Legge, S. Bader, G. Bacher, H. J. Lugauer, A. Waag, A. Forchel, and G. Landwehr, "High temperature operation of II-VI ridge-waveguide laser diodes," Electron. Lett., vol. 34, pp. 2032-2034, Oct. 1998.
5. G. J. Letal, J. G. Simmons, J. D. Evans, and G. P. Li, "Determination of active-region leakage currents in ridge-waveguide strained-layer quantum-well lasers by varying the ridge width," IEEE J. Quantum Electron., vol. 34, pp. 512-517, Mar. 1998.
6. 0.65Se/ZnSe quantum wires with strong lateral confinement effects," J. Cryst. Growth, vol. 159, pp. 455-458, 1996.