SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 248-252

Formation of InSb by annealing Sb2S3-In thin films

(3) Nair, M T S a Rodriguez Lazcano Y a Nair, P K a

a INSTITUTO DE ENERGÍAS RENOVABLES (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC PROPERTIES; EVAPORATION; HETEROJUNCTIONS; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; THIN FILMS; X RAY CRYSTALLOGRAPHY;

CHEMICAL BATH DEPOSITION; INDIUM ANTIMONIDE; THIOSULFATOANTIMONATE;

SEMICONDUCTING FILMS;

EID: 0033889299 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00472-8 Document Type: Article

Times cited : (9)

References (10)

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2
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3
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5
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- (1998) Sol. Energy Mater. Sol. Cells , vol.52 , pp. 313
- Nair, P.K.¹ Nair, M.T.S.² García, V.M.³ Arenas, O.L.⁴ Peña, Y.⁵ Castillo, A.⁶ Ayala, I.T.⁷ Gomezdaza, O.⁸ Sánchez, A.⁹ Campos, J.¹⁰ Hu, H.¹¹ Suárez, R.¹² Rincón, M.E.¹³

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.