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Volumn 114, Issue 2, 2000, Pages 69-74
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Light-induced creation and annihilation of two types of dangling bonds in a-Si:H: Their relative densities during illumination
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON TRANSITIONS;
HYDROGEN BONDS;
MATHEMATICAL MODELS;
POINT DEFECTS;
RADIATION EFFECTS;
SEMICONDUCTING SILICON;
CHARGE RECOMBINATION;
CHARGE TRAPPING;
DANGLING BONDS;
HYDROGENATED AMORPHOUS SILICON;
AMORPHOUS SILICON;
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EID: 0033887873
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1098(00)00009-0 Document Type: Article |
Times cited : (12)
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References (21)
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