Solidification of anisotropic semiconducting material-tellurium under microgravity conditions

Materials Science Forum

Volumn 329, Issue , 2000, Pages 297-304

  Parfeniev, R V ^a   Farbshtein, I I ^a   Shulpina, I L ^a   Yakimov, S V ^a   Shalimov, V P ^b   Turchaninov, A M ^b   Ivanov, A I ^c   Savin, S F ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b JSC Kompozit   (Russian Federation)

^c S P KOROLEV ROCKET AND SPACE CORPORATION ENERGIA   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; CRYSTALLIZATION; INGOTS; MICROGRAVITY PROCESSING; SEMICONDUCTOR DOPING; SOLIDIFICATION;

MODIFIED BRIDGMAN METHOD;

SEMICONDUCTING TELLURIUM;

EID: 0033887754     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.329-330.297     Document Type: Article

References (8)

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3. I.I. Farbshtein, R.V. Parfeniev, N.K. Shulga and L.L. Regel, Material Processing in High Gravity, Edited by L.L. Regel and W.R. Wilcox, Plenum Press, New York (1994) 81-88.
4. L.L. Regel, A.M. Turchaninov, R.V. Parfeniev, et al., J. Phys. III France 2 (1992) 373-382
5. R.V. Parfeniev, I.I. Farbshtein, S.V. Yakimov, V.P. Shalimov, A.M. Turchaninov. Joint Xth Eropean and VIth Russian Symposium PHYSICAL SCIENCES IN MICROGRAVITY St.Petersburg, Russia, 15-20 June 1997, Abstracts No.98. (1997).
6. E. Scheil, Z. Metallk. 34 (1942) 70
7. B. Cabane, J. Friedel, J. Phys. 32 (1971) 73.
8. I.I. Farbshtein, A.M. Pogarski, and S.S. Shalit, Fizika Tverdogo Tela, , v. 7 No.8, (1965) p.2383 (in Russian)